Self-Aligned AlGaN/GaN FinFETs

Abstract

We have demonstrated highly scaled, self-aligned AlGaN/GaN fin-shaped field-effect transistors (FinFETs), which were fabricated using e-beam lithography and a regrown n+ GaN ohmic process with a sacrificial dummy gate. Our devices were very aggressively scaled, with fin widths, gate length, and source drain spacing as small as 50, 60, and 200nm, respectively. DC characteristics, when normalized to active device periphery (number of fins times fin width), showed peak transconductance of 1.5 mS/ $\mu \text{m}$ and ON resistance of $390~\Omega $ - $\mu \text{m}$ . Enhancement mode device operation was observed for fin widths below 100 nm.