GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure

Abstract

In this work, GaN-based enhancement-mode fin-shaped field-effect transistor (FinFET) with double-channel AlGaN/GaN heterostructure is proposed. DC characteristic of AlGaN/GaN FinFET is simulated by sentaurus TCAD software. The simulation results indicate that double-channel AlGaN/GaN FinFET with doping AlGaN layers makes the saturation current and the control ability of the gate improved. Moreover, the single and double-channel AlGaN/GaN FinFETs with short gate length, an SS of 60mV/dec and 63mV/dec have been achieved. Next, both the first and the second AlGaN layer thickness are set to 20nm, the enhancement-mode double-channel AlGaN/GaN FinFET can be obtained with 30nm Fin width, and the peak transconductance reaches 417mS/mm. Finally, double-channel AlGaN/GaN FinFET with narrow Fin width or thin AlGaN layer can achieve enhancement-mode device, and the effect of the side gate could play a dominant role at the same narrow Fin width compared to the single-channel AlGaN/GaN FinFET, which can provide valuable theoretical reference for the double-channel AlGaN/GaN FinFET.