Abstract
The unexposed/exposed, Ag-rich (exposed)/Ag-poor (unexposed) and amorphous (unexposed)/crystallized (exposed) parts of vacuum evaporated amorphous chalcogenide films of composition As33S67, As33S50Se17, As33S33.5Se33.5, As33S17Se50, As33Se67, Agx(As33S67)100−x and Agx(As33S33.5Se33.5)100−x were selectively etched in water solutions of inorganic alkaline substances (NaOH, Na2S, (NH4)2S, Na2CO3 and NaCN). Different etching rates for exposed and unexposed parts were found depending upon the sample composition, type of etchant and its concentration. A resolution coefficient, γ, was confirmed by selectively etched films after their exposure through a gray-scale photomask with microlenses array motives.
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