Abstract
The change of chemical structure resulting after X-ray and photo-induced silver diffusion into chalcogenide glass (ChG) thin films is monitored by high resolution X-ray photoelectron spectroscopy (XPS). As 40S 60 and Ge 30Se 70 thin films, which are based on pyramids and tetrahedral structural units, are investigated as model materials. Survey, core level (As 3 d, S 2 p, Ge 3 d, Ge 2 p, Se 3 d, Ag 3 d 5/2, O 1 s, C 1s) and valence band spectra have been recorded and analyzed. Reference point for the binding energy is established by the subsequent deposition of thin gold film on top of the measured samples. The chemical structure gradually changes during diffusion of silver in all the samples. The mechanism of change depends on the chemical composition, thickness of the diffused silver layer and conditions of irradiation. It is revealed that surface oxygen can play important role in the Ag photodiffusion process, leading to phase separation on the surface of the films. Photodiffusion of Ag into As 40S 60 film leads to the formation of a uniform ternary phase and arsenic oxides on the surface. The formation of ethane-like Ge 2(S 1/2) 6 units together with germanium oxidation are the main outcomes of X-ray induced Ag diffusion into Ge 30Se 70 film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
