Selective Ṉucleation-based Epitaxy (SENTAXY)

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We have proposed a novel approach to form polycrystalline thin films called SENTAXY (Se¯lective N_ucleation-based Epitaxy¯). The location of the crystallites and boundaries with neighbors are generally random in poly-crystalline films over amorphous substrates, because the formation of the films is initiated by the spontaneous nucleation of crystallites. The proposed method introduces artificial nucleation sites at which the crystallites nucleate selectively and grow epitaxially. As a result, it becomes possible to predetermine the location of crystallites and their boundaries. The principle of the method has been demonstrated in the chemical-vapor deposition of Si and the solid-state crystallization of amorphous Si films and has also been applied to other Si.We have proposed a novel approach to form polycrystalline thin films called SENTAXY (Se¯lective N_ucleation-based Epitaxy¯). The location of the crystallites and boundaries with neighbors are generally random in poly-crystalline films over amorphous substrates, because the formation of the films is initiated by the spontaneous nucleation of crystallites. The proposed method introduces artificial nucleation sites at which the crystallites nucleate selectively and grow epitaxially. As a result, it becomes possible to predetermine the location of crystallites and their boundaries. The principle of the method has been demonstrated in the chemical-vapor deposition of Si and the solid-state crystallization of amorphous Si films and has also been applied to other Si.