Abstract
We have proposed a novel approach to form polycrystalline thin films called SENTAXY (Selective Nucleation-based Epitaxy). The location of the crystallites and boundaries with neighbors are generally random in polycrystalline films over amorphous substrates, because the formation of the films is initiated by the spontaneous nucleation of crystallites. The proposed method introduces artificial nucleation sites at which the crystallites nucleate selectively and grow epitaxially. As a result, it becomes possible to predetermine the location of crystallites and their boundaries. The principle of the method has been demonstrated in the chemical-vapor deposition of Si and the solid-state crystallization of amorphous Si films and has also been applied to other systems.
Published Version
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