Abstract
C 60 films are grown uniformly and area selectively on GaAs substrates by molecular beam epitaxy. Their crystalline and optical properties are investigated by reflection high energy electron diffraction, X-ray diffraction, and photoluminescence measurements. The C 60 films are found to be grown epitaxially on the substrates. The epitaxial relationships are [001] GaAs[111] C60, [11̄0] GaAs[11̄0] C60 for GaAs (001) substrates and [111] GaAs[111] C60, [11̄0] GaAs[11̄0] C60 for GaAs (111)B substrates. Area selective epitaxy of C 60 on GaAs (111)B substrates is successfully achieved by using SiO 2 mask. Efficient photoluminescence is observed in both uniformly and area selectively grown layers. The observed spectrum appears in the same spectral region as that observed in bulk cubic C 60.
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