Abstract
InAs was selectively grown on GaAs by conventional molecular beam epitaxy(MBE). No InAs growth was found on SiO2, except small InAs particles, when the substrate temperature was between 550 and 600°C and arsenic pressure was 1×10-5 Torr. The higher the substrate temperature, the better the selectivity. At 650°C, no growth was found on GaAs nor on SiO2. Selective epitaxial growth by MBE has been realized under proper growth conditions, and will be useful for device applications.
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