Abstract
GaAs selective epitaxial growth by conventional molecular beam epitaxy (MBE) was studied while varying its growth conditions, such as substrate temperature. As pressure, growth rate, and Si or Be doping. Selectivity is improved with the increase in substrate temperature, and with the decrease in As pressure or growth rate. Si and Be were doped up to 3 x 1018 and 3 × 1019 cm−3, respectively. While no Si doping influence was observed, Be doping degraded the surface morphology. Selective epitaxial growth by conventional MBE with appropriate growth conditions will be applicable to device fabrication.
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