Abstract
Films of SiO2, W and W/SiO2 have been applied as masks for the selective epitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD). The deposition selectiveties on SiO2 masks are mainly due to a difference in the absorption coefficients of reactant species between SiO2 and GaAs, while those on W masks are due to the surface migration of reactant species. Reactant species migrating on the surfaces of W masks are (finally) used in the epitaxial growth of opening windows, and selective epitaxial growth maintaining mask surfaces completely free from deposition have been attained for samples in which mask patterns are narrower than 40 µm.
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