Abstract
By exposure to an atom beam, polycrystal deposition on mask films (W and SiO2) was suppressed in the selective epitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD) under atmospheric pressure. While surface migration was enhanced on W surfaces, reevaporation was enhanced on SiO2 surfaces by atom beam irradiation. By optimizing growth conditions, selective epitaxial growth was realized without polycrystal deposition on stripe-shaped masks where the maximum width of the stripe was 40 µm for W masks and 150 µm for SiO2 masks.
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