Selective epitaxial growth by rapid thermal processing

Abstract

Rapid thermal processing chemical vapor deposition was employed for selective epitaxial growth of silicon. Defect-free epitaxial islands were grown into oxide windows with 〈110〉 sidewall orientation on (100) silicon substrates. The effects of growth temperature on the degree of faceting have been studied. The hydrogen prebake temperatures as low as 1000 °C have proven to be sufficient for high quality Si deposition without sidewall oxide undercutting.