Abstract
Rapid thermal processing chemical vapor deposition (RTPCVD) has received considerable attention because of its ability to reduce many of the processing problems associated with thermal exposure in conventional chemical vapor deposition, while still retaining the ability to grow high‐quality epitaxial layers. In this paper, silicon homoepitaxy growth by RTPCVD is studied extensively and comprehensively. The principles of the RTPCVD system are described, followed by results of experiments on in situ cleaning, undoped Si epitaxy on Si and silicon‐on‐insulator substrates, in situ doped Si epitaxy, and selective epitaxial growth of Si using oxide masks and oxide on polycrystalline Si on oxide masks. Selective growth was achieved without the use of . Our results show that RTPCVD is capable of growing high‐quality, epitaxial Si layers with sharp dopant transition profiles. A brief discussion of fabricated devices is included.
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