Selective electroplating of P-type and N-type areas on semiconductor surfaces

Abstract

We show how N-type or P-type areas of semiconductor surfaces across which the doping polarity varies can be selectively electroplated using DC and periodic reverse (PR) plating voltages. The N-type (P-type) areas of N-type (P-type) substrates having diffused/implanted P-type (N-type) pockets can be selectively plated by a DC plating voltage. On the other hand, the diffused/implanted P-type pockets in N-type substrates can be selectively plated by a PR voltage. We also discuss a practical application of these results to semiconductor devices.