Abstract
This paper presents interesting results of electroplating semiconductor surfaces having adjacent p-type and n-type areas, using dc and periodic reverse (PR) voltages. It is shown that, the n-type (p-type) areas of n-type substrates having diffused/implanted p-type pockets get selectively plated by dc (PR) plating voltages. On the other hand, a dc plating voltage selectively plates the p-type areas of p-type substrates containing diffused/implanted n-type regions; in this case, PR plating serves no useful purpose. Applications of these results are discussed. © 2002 The Electrochemical Society. All rights reserved.
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