Abstract
A methodical experimentation for electroless deposition of Gold metal on semiconductor substrate like Silicon is presented. This method involves minimum loss of metal and thick layers can be easily deposited on the substrate using photoresist as a mask. The rate of coating is in the range of 7.0 micrometer to 10.0 micrometer per hour without any deterioration of the photoresist which makes the present method quite attractive for heatsink formation.
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