Selective-area regrowth of GaN field emission tips

Abstract

Field emission current has been observed for the first time from GaN. Single-crystal GaN pyramids were grown in arrays by selective-area metalorganic chemical vapor deposition (MOCVD) on GaN thin films using a dielectric mask. GaN does not deposit on the dielectric mask and growth of hexagonal pyramid structures occurs only in mask openings. The pyramids were biased negatively with respect to a metal anode and an emission current of 0.8 μA at 2000 V was observed.