Abstract
We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.
Highlights
We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering
Using atomic force microscopy (AFM) and scanning tunneling microscopy (STM), we confirm that the roughness of the films grown directly on STO depends on the deposition temperature
The magnetic properties are fully recovered, even for deposition below TR, when the film is deposited in a LSMO/seed-layer/STO design, where the seed layer is a film of 0.5 to 1.5 LSMO unit cells deposited at room temperature (RT) and rapidly heated (∼ 100 ◦C/min) in oxygen to the film deposition temperature
Summary
We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. It is evident that the rms roughness increases with the thickness of the films deposited directly on the STO, while it is constant, at about half unit cell, for films grown on the seed layer.
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