Abstract

NdxSr1−xMnO3 (0.2≤x≤0.5) systems are widely studied in magnetism, popular for high colossal magnetoresistance and are ferromagnetic oxides with TC ranging from 200K to 300K. Recently, many of such compounds are re-visited for exploring the correlation of spin, charge and lattice degrees of freedom. Although, manganite thin films are the ideal candidates for studying the electron-correlation effects, the puzzle of obtaining a high quality epitaxial thin films of NdxSr1−xMnO3 are still unsolved contrary to its sister compound LaxSr1−xMnO3. Hence, in this study, we demonstrate the growth of best quality of Nd0.6Sr0.4MnO3 (NSMO) epitaxial thin films. This is evident from the TC and a sharp insulator-to-metal transition (IMT) coinciding at as high as ∼255K against the bulk TC (∼270K). It is the highest reported TC in Nd0.6Sr0.4MnO3 thin films to date. Moreover, as-deposited films with in situ oxygen annealing are not enough to relax the lattice of NSMO films due to the significant Jahn-Teller distortion in the film. With ex situ annealing processes alongside the various deposition and in situ annealing conditions, we have extensively studied the growth of epitaxial NSMO thin films on LaAlO3 (001) and SrTiO3 (001) to investigate the evolution of lattice and its one-to-one correspondence with the magnetism and the electrical properties of thin films. Accordingly, the enhanced magnetization, reduced resistivity and the higher TC and IMT of the NSMO films obtained from our extensive growth analysis looks promising for the future applications across the TC and IMT.

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