Abstract
Secondary ion mass spectrometry (SIMS) has been used as the analytical method to obtain directly depth concentration profiles of Pb (Ca and Ga) in magnetic garnet films. The films had the general composition (Y,Pb)3(Fe,Si,Ga)5O12 and were grown onto substrates of Ca-doped Y3Fe5O12 by means of the LPE technique. The film-substrate interface was found to be reasonably sharp. For dipping without rotation, a transient layer of about 0.28 μm thickness, in which the Pb content changed appreciably, was found arising from the initial non-steady state growth regime. In the case of dipping with rotation, this transient layer was of the order of 0.05 μm and displayed much smaller changes in the Pb content. Changes were also found at the surface of the film due to withdrawal of the specimen from the melt.
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