Abstract
Good vapour-phase epitaxial gallium arsenide on gallium arsenide can readily be obtained using trimethylgallium and arsine. The system is rapid and economical to use. Undoped material can be n or p-type with a carrier concentration of less than 5 × 1015cm-3. The best n-type material had a room temperature mobility of 6260 cm2sec-1V-1, and for the best p-type material it was 385 cm2sec-1V-1. Material can be controllably doped n-type with sulphur. Multiple sub-micron n+and n on p layers have been grown and used to fabricate Schottky barrier field effect transistors (FET). Material with good photocathode properties was grown by doping strongly p-type with dimethyl zinc.
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