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Abstract
Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals.
Highlights
Articles you may be interested in Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy
Crystal growth theory; dislocations create steps on the surface, which avert the propagation of monolayer steps that originate from the crystal tilt and result in growth spirals.10) Because a higher In composition lowers the potential energy, it is reasonable to consider that carriers within growth spirals are eventually captured by screw dislocations
Spectrum at the bright spot is nearly the same as that of the averaged CL spectrum, indicating that the emission from bright spots dominates the macroscopic luminescence properties. These findings indicate that potential minima form at growth spirals where captured carriers more efficiently recombine radiatively
Summary
Articles you may be interested in Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy. Screw dislocation-induced growth spirals as emissive exciton localization centers in Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN
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