Abstract
We investigate screening of polarization induced electric fields in a group III-nitride based laser diode with InGaN active layers. Via hydrostatic pressure dependent electroluminescence measurements and additional photocurrent spectroscopy experiments, it is shown that the introduction of Si doping with a concentration of 1 · 1019 cm–3 in the barriers of the active region leads to adequate screening of polarization induced electric fields. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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