Abstract
In this article, a microboron-doped diamond Schottky emitter for microelectron sources is presented. We fabricated an emitter tip on the top of the cantilever-type heating element using selective diamond deposition and silicon molding techniques. The fabricated diamond emitter shows high brightness emission current of 800 nA at a tip-anode (screen) electric field of 0.55 V/μm and tip heating voltage of 25 V. From the estimation using the Schottky emission model, the temperature of the emitter was found out 862±10 °C. The long-term stability of the emission current was characterized. This kind of structure can be utilized for electron sources with potential advantages of low threshold voltage and long lifetime stability in the proper emission condition.
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