Abstract

This paper describes the fabrication and evaluation of a boron-doped diamond micro Schottky emitter for micro-electron sources. We fabricated an emitter tip on the top of the cantilever-type heating element using selective diamond deposition and silicon molding techniques. The fabricated diamond emitter shows high brightness emission pattern of an emitting current of 800 nA with tip-anode (screen) electric field of 0.4 V//spl mu/m and tip heating power of 225 mW. This kind of structure can be useful for electron sources with potential advantages of low threshold voltage and long life time stability.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call