Abstract
Schottky diode has been realized on InP by a special dry surface treatment. The diode reaches a breakdown voltage of 60 V and the reverse current remains at 0.6 μA under 30 V reverse voltage. The best device shows a reverse current of 0.2 nA at 1 V voltage with an ideality factor of 1.54. The Schottky has been used as a gate in the fabrication of field-effect transistors (FETs) on InP by ion implantation and chemical beam epitaxy. The ion-implanted FET with a channel concentration of 2×1017 cm−3 shows a transconductance of 107 mS/mm at room temperature for a 3 μm gate length.
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