A comprehensive approach to the design and fabrication of a field-effect transistor with graphene channel

Abstract

The problems associated with the reduction of dimensions of electronic devices, especially MOSFET field effect transistors, have led to find solutions for the adverse phenomena that manifest when the channel is reduced to these dimensions. One of them is to use graphene, the first two-dimensional material, as a channel, instead of silicon, mainly due to its electrical characteristics, such as its high mobility compared to that of silicon, and physical characteristics in general, since they reduce the negative effects and allow manufacturing devices faster. The purpose of this article is to review the existing literature regarding modeling, simulation, and the steps for the fabrication of a graphene channel field effect transistor in its different stages, starting with the modeling and design of the transistor.