Abstract
Different from the conventional current-voltage and capacitance-voltage methods, Schottky contact barrier height extraction by admittance measurement is proposed and discussed in this paper. In this method, the barrier height can be simply extracted from the difference between the measured admittance at zero bias and a reasonably high forward bias. Both simulation results and experimental data demonstrate that the proposed method is effective not only for extraction of Schottky contacts with higher barrier heights (>0.4eV) but also for extraction of those with moderately lower barrier heights (0.2–0.4eV).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.