Abstract
A model is introduced which describes the electrical properties of a grain boundary under electron irradiation. The barrier height lowering under e-beam irradiation of selected grain boundaries is determined by admittance measurements and can be described in the framework of the model presented. Admittance and EBIC measurements at differently processed grain boundaries (annealed, solar processed) are not uniformly correlated. Calculations based on our GB model indicate that the observed, partially diverging, trends of barrier heights and EBIC contrasts may be caused by the different levels of e-beam irradiation at which admittance and EBIC are operated. A discrete trap level at Ev + 504 meV is generated at the grain boundary interface by intentional iron contamination. In this specific case, the electrical properties of the considered grain boundary are consistently described in the framework of our model by admittance and EBIC measurements. Es wird ein Modell zur Beschreibung der elektrischen Eigenschaften einer Korngrenze unter Elektronenbestrahlung vorgestellt. Die Barrierenhöhenabsenkung von ausgewählten Korngrenzen unter Bestrahlung wird aus Admittanzmessungen bestimmt und im Rahmen des vorgestellten Modells beschrieben. Admittanz- und EBIC-Messungen an unterschiedlich prozessierten Korngrenzen (Temperung, Solar-prozeß) zeigen keine Korrelation. Modellrechnungen lassen darauf schließen, daß die beobachteten, teils divergierenden Trends von Barrierenhöhe und EBIC-Kontrast auf die unterschiedlichen Bestrahlungsstärken zurückzuführen sind, bei denen Admittanz und EBIC durchgeführt werden. Durch gezielte Eisenverunreinigung einer Korngrenze wird ein diskretes Energieniveau bei Ev + 504 meV in der Korngrenze erzeugt. In diesem speziellen Fall werden die elektrischen Eigenschaften der Korngrenze im Rahmen unseres Modells konsistent durch Admittanz- und EBIC-Messungen beschrieben.
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