Abstract
We demonstrated Schottky-barrier solar cell using layer-structured semiconductor tungsten disulfide (WS2) nanofilm (NF) as the photo-active material. WS2 NFs were synthesized by chemical-vapor-deposition initiated on the surface of tungsten. The growth of WS2 NF was confirmed by Raman signature peaks representing active modes of E12g (351.5 cm−1) for in-plane and A1g (420.1 cm−1) for out-of-plane atomic vibrations, respectively. The ITO/WS2/Au Schottky-barrier solar cell was demonstrated by a layer-enabled assembling process, showing a photo-conversion efficiency of 1.7% and effective photon absorption in the wavelength range of 350 nm–950 nm. The Mott-Schottky characteristic suggests low density of bulk and interface defects in WS2 NF attributed to surfaces with negligible amount of dangling bonds which is the essential nature of layered semiconductors.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
