Abstract
We investigated the synthesis of delafossite PtCoO2 crystals, performed electronic transport measurements, and researched the formation of heterojunction with layered films. The crystal was deposited onto a c-plane sapphire substrate using the vapor growth method. The in-plane resistivity (460–475 µΩcm) is comparable to that of layered materials, such as few-layer graphite, applied to electrodes. Schottky contacts were obtained between PtCoO2 and n-type MoS2; therefore, a Schottky barrier diode with a low reverse saturation current was fabricated. The Schottky barrier height (ΦB) was estimated to be 0.896 eV. The atomic scale electric dipole at the interface may contributed to achieving a large ΦB. In addition, Fermi level pinning was suppressed owing to the formation of an interface by the dry transfer method.
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