Scattering of electrons at impurity ions at low temperatures in a superlattice with doped quantum wells

Abstract

The longitudinal and transverse mobilities of electrons in a superlattice with doped quantum wells, limited by scattering of the electrons at impurity ions, are calculated. The case of low temperatures and low densities of charge carriers is considered. The Conwell-Weisskopf hypothesis of the minimum scattering angle is used to solve the Boltzmann equation for a nondegenerate electron gas in the region of weak screening of the Coulomb potential of impurity ions. The numerical calculations are performed for the symmetric superlattice GaAs/Al0.36Ga0.64As with a period of 10 nm and an electron concentration of 1014 cm−3 at T=20 K.