Hot electron cooling in parabolic and modulation doped quantum wells and doped superlattices

Abstract

Hot electron cooling in variously structured and doped quantum wells and superlattices has been studied by low temperature steady-state photoluminescence. A parabolic quantum well realized by thickness grading of Al 0.3Ga 0.7As and GaAs epitaxial layers deposited by molecular beam epitaxy with electron level spacings of ∼25 meV did not show increased electron plasma temperatures compared to thick epitaxially deposited GaAs or square quantum wells with electron level spacings greater than the LO phonon energy of GaAs; this implies that mechanisms involving intersubband Δk ≠ 0 transitions and interfacial recombination are dominant in the parabolic structure. Investigations as a function of carrier concentration in modulation-doped quantum wells and n-type superlattices with strong miniband formation indicate that increasing the carrier concentration in either structure above ∼ 5 × 10 17 cm -3 significantly increases the electron plasma temperatures, even under low light excitation, suggesting that such structures may be suited for high efficiency hot electron photovoltaic and photoelectrochemical cells.