Abstract
Electron scattering by out-of-plane (Flexural) phonon modes and its contribution to resistivity in single layer non strained doped graphene is studied as a function of electron temperature, concentration and coupling deformation potential in the BG regime. The flexural phonon modes dispersion relation is quadratic so these low energy flexural phonons abound at room temperature and as a result deform the graphene sheet in the out of plane direction and hence these phonons act as the major scattering source that resists the flow of current. We produce analytical result for scattering rate and resistivity by flexural phonons and compare the results with that of in plane phonons in the BG regime. We find that flexural phonon scattering rate to vary as T3 with temperature and as n−3/2 with carrier concentration in contrast to the reported T4 and n−1 dependence for in-plane phonons.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call