Abstract
We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion relation, which becomes linear at long-wavelengths when the sample is under tension due to the rotational symmetry breaking. In the non-strained case, scattering by flexural phonons is the main limitation to electron mobility. This picture changes drastically when strains above u¯=10−4n(1012cm−2) are considered. Here we study in particular the case of back gate induced strain, and apply our theoretical findings to recent experiments in suspended graphene.
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