Abstract
Scanning tunneling microscopy has been used to study the postnucleation growth of Ge on GaAs(110) at 420 \ifmmode^\circ\else\textdegree\fi{}C. In the deposition range from 1 to 10 monolayers (ML), there is lateral overlayer growth through static coalescence with little change in the island height. For depositions above \ensuremath{\sim}10 ML, the surface is completely covered by Ge and layer-by-layer growth is observed. Our results show that rough surfaces with isotropic islands and smooth surfaces with elongated islands can be obtained by simply varying the deposition rate or the growth temperature. Arsenic atom segregation is also observed, and the surface reconstructions reflect the As concentration. We propose a surface structure model consisting of As zigzag chains and As dimers.
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