Abstract
Scanning tunneling microscopy study of Ge growth on GaAs(110) at 420 \ifmmode^\circ\else\textdegree\fi{}C shows that rough surfaces with isotropic islands and smooth surfaces with elongated islands can be obtained simply by varying the deposition rate. Quantitative measurements of the surface height--height correlation function G(x) along [001] and G(y) along [11\ifmmode\bar\else\textasciimacron\fi{}0] show that the ratio G(x)/G(y) at large x,y is 1.02\ifmmode\pm\else\textpm\fi{}0.07 for surfaces with isotropic islands and 1.90\ifmmode\pm\else\textpm\fi{}0.17 for surfaces with anisotropic islands. A comparison with recent predictions of anisotropic growth yields encouraging consistency.
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