Scanning Probe Lithography with Negative and Positive Electron Beam Resists

Abstract

In this research, we focus on scanning probe lithography (SPL) to create nanostructures of negative and positive electron beam (EB) resists on a silicon (Si) substrate by common scanning probe microscopy (SPM). Microposit SAL 601 and ZEP 520A are used as the negative and positive EB resists, respectively. The EB resist films of 40–50 nm thickness are used for writing nanopatterns with low-energy electrons emitted from the probe tip in SPM. The effect of the baking conditions on nanopatterning for each resist film is experimentally investigated, and suitable baking conditions for both EB resist films are determined. The nanostructures of both resists baked under each set of suitable conditions are created under several writing conditions in order to confirm the possibility of nanopatterning and the controllability of the line width of the nanostructures. In addition, we discuss the prediction method for the line width on the basis of analysis of the static electric field inside the resist films.