Abstract
AbstractPolyamidethioethers were synthesized and evaluated as positive electron beam (EB) resists, The polyamidethioethers decomposed easily with EB exposure. At high doses (indicating low sensitivity), crosslinking reactions occurred for polyamidethioethers having C‐S bonds produced by Michael addition, but the other polyamidethioethers did not crosslink. The C‐S bonds produced by Michael addition may influence crosslinking rather than decomposition. The sensitivity of oxidized polyamidethioether was higher than that of the nonoxidized polymer with no change in resolution. The oxidized polyamidethioether had a high sensitivity and a high resolution, and is adaptable as a positive EB resist.
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