Relationship between electron sensitivity and chemical structures of polymers as EB resists. III. Electron sensitivity of various polyamides using 3‐amino perhydroazepine

Abstract

AbstractHomopolyamides and copolyamides containing a variety of reactive and/or stabilizing groups, such as double bonds, epoxy groups, or naphthalene moieties, were synthesized using 3‐amino perhydroazepine (APA) as a diamine monomer. These polymers were evaluated as electron beam (EB) resists, in order to investigate the relationship between EB sensitivity and chemical structure of the polyamides. It was found that polyamides containing double bonds were easily crosslinked by the EB exposure and that the sensitivity of a polyamide containing double bonds in the side chain was higher than that of a polyamide containing double bonds in the main chain. The sensitivity of a polyamide containing epoxy groups was lower than that of the above. Copolymer from APA, 77 mol % of trans‐3‐hexenedioyl chloride (HC) and 23 mol % of 2,6‐naphthalenedioyl chloride (NC) had the same EB sensitivity as that of the homopolymer from APA and HC. The polyamides had excellent dry etching durability and were adaptable to EB lithography.