Scanning internal photoemission microscopy for the identification of hot carrier transport mechanisms

Abstract

Linear and nonlinear internal photoemission in a thin-film metal-insulator-metal heterosystem, i.e., a Ta-TaOx-Ag junction, together with surface reflectivity are mapped with a lateral resolution of better than 5 μm. The spatial correlation of the different signals and time-resolved internal photoemission spectroscopy reveal excitation mechanisms and ballistic hot carrier injection. The internal photoemission yield variation with Ag layer thickness is quantitatively explained by above-barrier injection. The hot-spot-like behavior of the two-photon induced internal photoemission observed for short pulse excitation is attributed to local field enhancements because of Ag-film thickness reduction and plasmonic effects at structural defects.