Abstract
Cathodoluminescence (CL) as a radiative light produced by an electron beam exciting a luminescent material, has been widely used in imaging and spectroscopic detection of semiconductor, mineral and biological samples with an ultrahigh spatial resolution. Conventional CL spectroscopy shows an excellent performance in characterization of traditional material luminescence, such as spatial composition variations and fluorescent displays. With the development of nanotechnology, advances of modern microscopy enable CL technique to obtain deep valuable insight of the testing sample, and further extend its applications in the material science, especially for opto-electronic investigations at nanoscale. In this article, we review the study of CL microscopy applied in semiconductor nanostructures for the dislocation, carrier diffusion, band structure, doping level and exciton recombination. Then advantages of CL in revealing and manipulating surface plasmon resonances of metallic nanoantennas are discussed. Finally, the challenge of CL technology is summarized, and potential CL applications for the future opto-electronic study are proposed.
Highlights
Cathodoluminescence (CL) as an optical and electromagnetic phenomenon referring to the radiation in a form of fluorescence[1], was first discovered in the mid-nineteenth century from cathode electron rays hitting a glass substrate
We focus on CL investigations for semiconductors and metallic nanostructures, respectively
The influence of temperature and external field strength on the carrier concentration can be analyzed according to CL images. This theory shows that CL microscopy provides an effective and high-resolution method for detecting the carrier concentration of semiconductor nanowires, and can be applied to other semiconductor nanostructures with definite band structures
Summary
Cathodoluminescence (CL) as an optical and electromagnetic phenomenon referring to the radiation in a form of fluorescence[1], was first discovered in the mid-nineteenth century from cathode electron rays hitting a glass substrate. With properly designing metallic nanostructures, it is possible to control and manipulate the light emission at deep sub-wavelength scale for future information and quantum studies Both electron energy loss spectroscopy (EELS) and photoemission electron microscopy (PEEM) have extraordinary performance on high-resolution characterization and provide distinctive directions for investigating plasmons. The influence of temperature and external field strength on the carrier concentration can be analyzed according to CL images This theory shows that CL microscopy provides an effective and high-resolution method for detecting the carrier concentration of semiconductor nanowires, and can be applied to other semiconductor nanostructures with definite band structures. It is possible to adjust the coupling efficiency of the hybrid mode by adjusting two arms of the nanowire, thereby affecting a l=1 b
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