Abstract
AbstractThe combination of cathodoluminescence (CL) in scanning electron microscopy (SEM) with computer graphics is proposed for studying semiconductors and dielectric materials. Spatial distribution of several types of defects that occurred naturally and by design in crystals, can be sorted out and visualized in CL mapping and in three‐dimensional images reconstructed in scanning cathodoluminescence microscopy. The possibilities of this method are illustrated on magnesium oxide single crystals indented with a Vickers diamond pyramid.
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