Abstract
The magneto-transport of a GaAs FET having a Si atomic layer doped layer as the conducting channel was studied as a function of the carrier density in the channel. The negative magneto-resistance (NMR) was observed at cryogenic temperatures (4.2–40 K), which was enhanced by increasing the gate voltage, i.e., by decreasing the carrier density. By increasing the magnetic field, however, the NMR reaches a saturated constant, of which magnitude was increased by increasing the gate voltage. By normalizing the magnetic field and the magnitude of the NMR by a constant, we found that the behavior of the initial increase followed by the saturation is expressed by a unified function irrespective to the gate voltage. The unified function was determined by the concentration of Si atoms.
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