Abstract
Abstract .In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation. Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.