Abstract
The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) photoluminescence (PL), and Van der Pauw methods. The H-ion implantation (peak concentration: 1.45×1020cm−3) into ZnO is performed using a 500keV implanter. The resistivity decreases from 2.5×103Ωcm for unimplanted ZnO to 6.5Ωcm for as-implanted one. RBS measurements show that Zn interstitial as a shallow donor is not recognized in as-implanted samples. From photoluminescence measurements, the broad green band emission is observed in as-implanted samples. NRA measurements for as-implanted ZnO suggest the existence of the oxygen interstitial. The origins of the low resistivity in the as-implanted sample are attributed to both the H interstitial as a shallow donor and complex donor between H and disordered O. The activation energy of H related donors estimated from the temperature dependence of carrier concentration is 29meV.
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