Abstract
The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6×1020cm−3) into ZnO is performed using a multiple-step energy. The high resistivity of ∼103Ωcm in un-implanted samples remarkably decreased to ∼10−2Ωcm after implanting Ge-ion and annealing subsequently. NRA measurements of as-implanted and annealed samples suggest the existence of the lattice displacement of O atoms acting as acceptor defects. As O related defects still remain after annealing, these defects are not attributed to the origin of the low resistivity in 800 and 1000°C annealed ZnO.
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