Abstract
Field emission has been demonstrated from silicon that has been ion- implanted with carbon and nitrogen. Self-assembled silicon nanostructures were prepared as a template on the surface of wafer silicon, prior to multiple low-energy ion implantations. Following ion implantation, the original surface nanostructuring was lost. However, after electron beam annealing, self-assembled surface nanostructures were observed. Nuclear reaction analysis and Rutherford backscattering spectrometry indicated a Si0.6C0.1N0.3 layer extending to a depth of ~120 nm. Electron emission was measured from the as-implanted and post-annealed samples. The implanted and annealed sample showed a low turn-on field of 10 V/μm compared with 44 V/μm for the as-implanted sample.
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