Abstract
Buffer structures and edge termination have a decisive influence on the static and dynamic characteristics of free-wheeling diodes. In this paper the influence of buffer structures at the cathode side, the influence of the design of the edge termination and of a resistive zone at the anode side are analysed with respect to the ruggedness of free-wheeling diodes. Therefore, we investigated the device behaviour by means of numerical device simulation concerning the formation of current filamentation and the correlated shape of the electrical field distribution. The considered edge termination of the diodes was planar junction termination extensions and a beveled edge. Various buffer structures, a Gaussian buffer and a buried n-doped layer of increased doping called epitaxy level buffer are compared with a reference diode without any buffer structure.
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