Abstract
In rapid thermal processing (RTP), an accurate temperature distribution adjusting is necessary for manufacturing of homogeneous thin layers and junctions. A common practice is to evaluate RTP systems in this direction by ellipsometric measurements of oxide thickness grown on silicon wafer. The oxide thickness is a function of the temperature distribution during the complete rapid thermal oxidation process including heating and cooling. The goal of this work is to judge the effect of the heating up period on oxide growth. The influence of different heating cycles (different ramp rates and process temperatures) on the oxide thickness distribution is investigated.
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